Copper films (250 nm) deposited on glass Substrates, at different Substrate temperatures. Their optical properties were measured by ellipsometery (single wavelength of 589.3 nm) and spectrophotometery in the spectral range of 200– 2600 nm. Kramers Kronig method was used for the analysis of the reflectivity curves of Cu films to obtain the optical constants of the films, while ellipsometery measurement was carried out as an independent method. The influence of Substrate temperature on the microstructure of thin metallic films [Structure Zone Model (SZM)] is well established. The Effective Medium Approximation (EMA) analysis was used to establish the relationship between the SZM and EMA predictions. Good agreements between SZM as a function of Substrate temperature and the values of volume fraction of voids obtained from EMA analysis, are obtained; by increasing the Substrate temperature the separation of the metallic grains decreases hence the volume fraction of voids decreases and denser films are formed. The unusual (anomalous) behavior of the void fraction as a function of wavelength for different Substrate temperatures, in certain wavelength region is explained to be due to the roughness value of the film surface. This value corresponds to this wavelength region scattering from the surface roughness. This phenomenon may be used as a technique for surface roughness measurement.

The nanocrystalline ZnS semiconducting thin films of 500 nm thickness have been deposited on glass Substrate at different Substrate temperatures (Ts) by thermal evaporation technique. The structural property of deposited thin films has been measured by X-ray diffraction, scanning electron microscopy, and Energy dispersive analysis of X-ray. The electrical and optical properties of thin films have been determined by D.C. two point probe and ultraviolet visible spectroscopy measurements. The X-ray diffraction patterns show that thin films have cubic structure. The electrical resistivity of thin films has decreased from 0.36´106 to 0.15´106 W cm as Substrate temperature increases from 300 to 400 K. It shows that films have semiconducting in nature. The grain size and electrical conductivity of the thin films have increased as the deposition temperature increased while dislocation density, activation energy, and band gap decreased. The minimum band gap 3.43eV has been found.

Cadmium oxide (CdO) thin films were produced in this study utilizing a spray pyrolysis approach using a perfume atomizer at varied Substrate temperatures. The cubic crystal structure of the CdO was shown by XRD analysis. The size of the crystallites, dislocation density, and microstrain were determined and studied. All samples exhibit a sharp shift in transmission, indicating a straight transition and high crystallinity. In the wavelength range 400 nm - 800 nm, raising Substrate temperature from 200 - 300 °C increases film transmission by up to 45 - 58%. The band gap Eg is calculated and found to be between 2.23 and 2.40 eV for the Substrate temperature of 200 – 300°C. Scanning electron microscopy and energy-dispersive X-ray spectra were used to determine morphology and elemental composition, respectively. The photoluminescence spectra of the samples show violet to blue emission peaks centered around 439 nm. The films were found to have good optical properties, making them ideal for optoelectronic applications.

Tellurium nanostructures have been prepared by physical vapor deposition method in a tube furnace. The experiments were carried out under argon gas flow at a pressure of 1 mbar. Tellurium powder was evaporated by heating at 350oC and 430oC and was condensed on Substrates at 110–250oC, in the downstream of argon gas flow. The products were characterized by field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD). FESEM revealed that most of the products have one dimensional structure. X-Ray diffraction (XRD) patterns show that the products are crystalline with hexagonal structures.

The nano-structural and electrical properties of titanium thin film of 237 nm thickness deposited with a rate of 3.0 nms-1 on glass Substrates at different Substrate temperatures (390, 470, 510 and 580 K) are studied. The nanostructure of these films was obtained using x-ray diffraction (XRD) and atomic force microscopy (AFM), while the thickness were measured by means of Rutherford back scattering (RBS). XRD results show the development of A (112) TiO2 preferred orientation by increasing the Substrate temperature. The results also show that the grain size, the roughness and the conductivity of these films increase with Substrate temperature.

Al-doped ZnO (Al/ZnO) thin film is a promising alternative to an ITO electrode in solar cell applications due to its low price, non-toxicity and other promising properties. In this paper, Al/ZnO thin films at different Substrate temperatures were deposited on glass Substrates as transparent conducting (TCO) films by DC magnetron sputtering. The effect of Substrate temperature on the structural, morphological and optical properties of Al/ZnO films was investigated. X-ray diffraction (XRD) analysis suggests that crystal structure characteristics of synthesized thin films depend on the Substrate temperature. The structure growth and variation in surface roughness with increasing Substrate temperature are revealed by scanning electron microscope (SEM) micrographs and atomic force microscopy (AFM) analyses. Thicknesses of the deposited films were also examined by surface profiler. Moreover, obtained results from optical transmission patterns revealed that with the increasing Substrate temperature, optical transmittance decreases.